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Öğe The diamagnetic susceptibility of hydrogenic donor in two-dimensional semiconductors with anisotropic effective mass of carriers(Academic Press Ltd- Elsevier Science Ltd, 2012) Akbas, H.; Bulut, P.; Dane, C.; Skarlatos, Y.In this study, the effects of quantum confinement and effective mass anisotropy parameter on the diamagnetic susceptibility of a hydrogenic donor placed in GaAs. Si, and Ge quantum wells with infinite confinement potential are investigated in the effective mass and parabolic band approximations by using two and one parameter trial wave functions. It is observed that the diamagnetic susceptibility of a hydrogenic donor in anisotropic quantum wells is essentially equal to the transverse diamagnetic susceptibility part when well widths are larger than L > 100 angstrom, and the impurity is located at center. Moreover, a two parameter trial wave function model gives higher values of diamagnetic susceptibility, except for chi(z) (GaAs). (C) 2011 Elsevier Ltd. All rights reserved.Öğe The effect of magnetic field in a GaAs/AlAs spherical quantum dot with a hydrogenic impurity(Elsevier, 2009) Akbas, H.; Dane, C.; Guleroglu, A.; Minez, S.Using a variational procedure within the effective-mass approximation we calculate the binding and normalized binding energies of a hydrogenic donor impurity in a GaAs/AlAs spherical quantum dot, under the action of homogeneous magnetic field (B) over right arrow (0, 0, B) directed along the z-axis. A proper choice of the dot radius and the magnetic field can largely change the normalized binding energy NEbB of a central hydrogenic impurity in the spherical quantum dot, which may be used to feel the small change in the dot radius. (C) 2008 Elsevier B.V. All rights reserved.Öğe Effect of spatial electric field on the sub-band energy in a cubic GaAs/AlAs quantum dot(Elsevier Science Bv, 2007) Dane, C.; Akbas, H.; Talip, N.; Kasapoglu, K.The electron sub-band energy of a cubic GaAs/AlAs quantum dot under an applied spatial electric field is theoretically investigated within a variational scheme. In this case, we show that the electron sub-band energy E decreases with spatial electric field strength F and increases or decreases depending upon the orientation of the spatial electric field. (C) 2007 Elsevier B.V. All rights reserved.Öğe Electric field effect in a GaAs/AlAs spherical quantum dot(Elsevier Science Bv, 2008) Dane, C.; Akbas, H.; Minez, S.; Guleroglu, A.Using a variational procedure within the effective-mass approximation we calculate the binding and normalized binding energy (NEbF) of a shallow donor impurity in a GaAs/AlAs spherical quintum dot, under the action of constant uniform electric field applied in the z-direction. A proper choice of the dot radius and electric field call largely change NEbF of a centre shallow impurity in the spherical quantum dot, which may be used to feel the small change in the dot radius. (C) 2008 Elsevier B.V. All rights reserved.Öğe Ground state normalized binding energy of impurity in asymmetric quantum wells under hydrostatic pressure(Academic Press Ltd- Elsevier Science Ltd, 2016) Akbas, H.; Sucu, S.; Minez, S.; Dane, C.; Akankan, O.; Erdogan, I.We have studied and computed variationally the impurity energy, impurity energy turning points, and ground state normalized binding energy as functions of the impurity position for shallow impurity in asymmetric quantum wells under hydrostatic pressure. We found that the normalized binding energy significantly depends on the asymmetry of the well, besides depending on,the impurity position and hydrostatic pressure. Also, the dependence of the positive normalized binding energy on the pressure can be used to find out the degree of the asymmetry of the well or the impurity position in the well. (C) 2016 Elsevier Ltd. All rights reserved.Öğe Hydrogenic donor in asymmetric AlxLGa1-xLAs/GaAs/AlxRGa1-xRAs quantum wells(Elsevier Science Bv, 2014) Akbas, H.; Dane, C.; Erdogan, I.; Akankan, O.In this work we study the effects of barrier height ratio V-L/V-R on asymmetric AlxLGa1-xLAs/GaAs/AlxRGa1-xRAs quantum wells in absence of external influences. We use a variational method within the effective mass approximation to observe the effects of the barrier height ratio. It has been observed that the binding energy of the impurity, the expectation value of the electron-impurity distance along the z-direction, density of impurity states, and edge binding energy difference depend strongly on the barrier height ratio. Furthermore we present new curves that analyze the binding energy of asymmetric quantum wells as functions of barrier height ratio. (C) 2014 Elsevier B.V. All rights reserved.Öğe The hydrostatic pressure and electric field effects on the normalized binding energy of hydrogenic impurity in a GaAs/AlAs spherical quantum dot(Elsevier Science Bv, 2011) Dane, C.; Akbas, H.; Guleroglu, A.; Minez, S.; Kasapoglu, K.A theoretical study of combined effects of the hydrostatic pressure and the electric field on the subband ground state energy and on the normalized ground state binding energy of a hydrogenic donor impurity on center located in a GaAs/AlAs spherical quantum dot with fixed dot radius is presented. The study is performed in the framework of the effective mass and parabolic band approximations and using a variational procedure. As a key result, it may be possible to gather high resolution maps of electric field on the studied structure with described technique. (C) 2011 Elsevier B.V. All rights reserved.Öğe Quantum integrable system related to homogeneous space of groups SO(1,2)(1995) Verdıyev, Y. A.; Dane, C.[Abstract Nıt Available]Öğe Simultaneous effects of electric and magnetic fields in a GaAs/AlAs spherical quantum dot with a hydrogenic impurity(Elsevier, 2010) Dane, C.; Akbas, H.; Minez, S.; Guleroglu, A.In this paper, the effects of electric and magnetic fields on the ground state of a hydrogenic on-centre donor in a GaAs/AlAs spherical quantum dot have been studied. A variational approach within the framework of effective mass approximation is used in the calculations. Overall, the analysis shows that a proper choice of the dot radius and the electric and magnetic fields can largely change the normalized binding energy, which in turn may be used to feel the small change in dot radius and thus detect different magnetic field strengths. (C) 2010 Elsevier B.V. All rights reserved.Öğe Spatial electric field effect in a GaAs/AlAs tetragonal quantum dot(Elsevier Science Bv, 2008) Akbas, H.; Dane, C.; Kasapoglu, K.; Talip, N.Within the effective-mass approximation and with two-parameter variational procedure we have calculated the effect of spatial electric field and ratios of dot edge lengths(c/a) on the electron sub-band energy and the polarization of an electron in the tetragonal GaAs/AlAs quantum dot. It is found that the electric flux Phi leaving the tetragonal dot is reliable parameter for describing the structure. (C) 2007 Elsevier B.V. All rights reserved.
