Electric field effect in a GaAs/AlAs spherical quantum dot
Küçük Resim Yok
Tarih
2008
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Using a variational procedure within the effective-mass approximation we calculate the binding and normalized binding energy (NEbF) of a shallow donor impurity in a GaAs/AlAs spherical quintum dot, under the action of constant uniform electric field applied in the z-direction. A proper choice of the dot radius and electric field call largely change NEbF of a centre shallow impurity in the spherical quantum dot, which may be used to feel the small change in the dot radius. (C) 2008 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Turning Point, Spherical Dot, Impurity, Normalized Binding Energy, Binding-Energy, Donor States, Parabolic Confinement, Impurity States, Magnetic-Field, Shallow Donor
Kaynak
Physica E-Low-Dimensional Systems & Nanostructures
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
41
Sayı
2
