Hydrogenic donor in asymmetric AlxLGa1-xLAs/GaAs/AlxRGa1-xRAs quantum wells
Küçük Resim Yok
Tarih
2014
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this work we study the effects of barrier height ratio V-L/V-R on asymmetric AlxLGa1-xLAs/GaAs/AlxRGa1-xRAs quantum wells in absence of external influences. We use a variational method within the effective mass approximation to observe the effects of the barrier height ratio. It has been observed that the binding energy of the impurity, the expectation value of the electron-impurity distance along the z-direction, density of impurity states, and edge binding energy difference depend strongly on the barrier height ratio. Furthermore we present new curves that analyze the binding energy of asymmetric quantum wells as functions of barrier height ratio. (C) 2014 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Quantum Well, Binding Energy, Density Of Impurity States, Impurity Position, Shallow Impurity States, Applied Electric-Field, Hydrostatic-Pressure, Binding-Energy, Cross-Section, Density, Temperature, Spectra
Kaynak
Physica E-Low-Dimensional Systems & Nanostructures
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
60
