Electric field effect in a GaAs/AlAs spherical quantum dot
| dc.authorid | GULEROGLU, ARZU/0000-0002-8637-1245 | |
| dc.contributor.author | Dane, C. | |
| dc.contributor.author | Akbas, H. | |
| dc.contributor.author | Minez, S. | |
| dc.contributor.author | Guleroglu, A. | |
| dc.date.accessioned | 2024-06-12T11:16:48Z | |
| dc.date.available | 2024-06-12T11:16:48Z | |
| dc.date.issued | 2008 | |
| dc.department | Trakya Üniversitesi | en_US |
| dc.description.abstract | Using a variational procedure within the effective-mass approximation we calculate the binding and normalized binding energy (NEbF) of a shallow donor impurity in a GaAs/AlAs spherical quintum dot, under the action of constant uniform electric field applied in the z-direction. A proper choice of the dot radius and electric field call largely change NEbF of a centre shallow impurity in the spherical quantum dot, which may be used to feel the small change in the dot radius. (C) 2008 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.physe.2008.07.016 | |
| dc.identifier.endpage | 281 | en_US |
| dc.identifier.issn | 1386-9477 | |
| dc.identifier.issn | 1873-1759 | |
| dc.identifier.issue | 2 | en_US |
| dc.identifier.scopus | 2-s2.0-55249108438 | en_US |
| dc.identifier.scopusquality | Q2 | en_US |
| dc.identifier.startpage | 278 | en_US |
| dc.identifier.uri | https://doi.org/10.1016/j.physe.2008.07.016 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14551/24464 | |
| dc.identifier.volume | 41 | en_US |
| dc.identifier.wos | WOS:000261481800019 | en_US |
| dc.identifier.wosquality | Q3 | en_US |
| dc.indekslendigikaynak | Web of Science | en_US |
| dc.indekslendigikaynak | Scopus | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier Science Bv | en_US |
| dc.relation.ispartof | Physica E-Low-Dimensional Systems & Nanostructures | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Turning Point | en_US |
| dc.subject | Spherical Dot | en_US |
| dc.subject | Impurity | en_US |
| dc.subject | Normalized Binding Energy | en_US |
| dc.subject | Binding-Energy | en_US |
| dc.subject | Donor States | en_US |
| dc.subject | Parabolic Confinement | en_US |
| dc.subject | Impurity States | en_US |
| dc.subject | Magnetic-Field | en_US |
| dc.subject | Shallow Donor | en_US |
| dc.title | Electric field effect in a GaAs/AlAs spherical quantum dot | en_US |
| dc.type | Article | en_US |
