Electronic and structural properties of large lattice-mismatched Si/BP superlattice
dc.contributor.author | Ozkapi, B. | |
dc.contributor.author | Guler, S. | |
dc.contributor.author | Dalgic, S. | |
dc.date.accessioned | 2024-06-12T11:03:12Z | |
dc.date.available | 2024-06-12T11:03:12Z | |
dc.date.issued | 2011 | |
dc.department | Trakya Üniversitesi | en_US |
dc.description.abstract | We present results for electronic and structural properties of large lattice mismatched Si/BP superlattice by first principle calculations based on the density functional theory. A self-consistent pseudopotential calculation has been pet-formed at Si/BP (001) strained interface. We also analyze the total energy of ground state, lattice constant and electrostatic potential line up of heterojunction between Si/BP zincblende compounds. Finally, we have investigated electronic band structure and the effect to electrostatic potential line up of structural details at interface of this system. | en_US |
dc.identifier.endpage | 1506 | en_US |
dc.identifier.issn | 1454-4164 | |
dc.identifier.issn | 1841-7132 | |
dc.identifier.issue | 11-12 | en_US |
dc.identifier.startpage | 1502 | en_US |
dc.identifier.uri | https://hdl.handle.net/20.500.14551/21570 | |
dc.identifier.volume | 13 | en_US |
dc.identifier.wos | WOS:000298834200028 | en_US |
dc.identifier.wosquality | Q4 | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.language.iso | en | en_US |
dc.publisher | Natl Inst Optoelectronics | en_US |
dc.relation.ispartof | Journal Of Optoelectronics And Advanced Materials | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Heterostructure | en_US |
dc.subject | Superlattice | en_US |
dc.subject | Electrostatic Potential | en_US |
dc.subject | Electronic Band Structure | en_US |
dc.subject | Light-Emitting-Diodes | en_US |
dc.subject | Buffer Layer | en_US |
dc.subject | Gan | en_US |
dc.subject | Silicon | en_US |
dc.subject | Growth | en_US |
dc.subject | Substrate | en_US |
dc.subject | Sapphire | en_US |
dc.subject | Si(111) | en_US |
dc.subject | Bp | en_US |
dc.subject | Epitaxy | en_US |
dc.title | Electronic and structural properties of large lattice-mismatched Si/BP superlattice | en_US |
dc.type | Article | en_US |