Electronic and structural properties of large lattice-mismatched Si/BP superlattice
Küçük Resim Yok
Tarih
2011
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Natl Inst Optoelectronics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We present results for electronic and structural properties of large lattice mismatched Si/BP superlattice by first principle calculations based on the density functional theory. A self-consistent pseudopotential calculation has been pet-formed at Si/BP (001) strained interface. We also analyze the total energy of ground state, lattice constant and electrostatic potential line up of heterojunction between Si/BP zincblende compounds. Finally, we have investigated electronic band structure and the effect to electrostatic potential line up of structural details at interface of this system.
Açıklama
Anahtar Kelimeler
Heterostructure, Superlattice, Electrostatic Potential, Electronic Band Structure, Light-Emitting-Diodes, Buffer Layer, Gan, Silicon, Growth, Substrate, Sapphire, Si(111), Bp, Epitaxy
Kaynak
Journal Of Optoelectronics And Advanced Materials
WoS Q Değeri
Q4
Scopus Q Değeri
Cilt
13
Sayı
11-12
