Kuantum noktalarının elektrik ve manyetik alan altında elektronik özellikleri
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Dosyalar
Tarih
2008
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Trakya Üniversitesi Fen Bilimleri Enstitüsü
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Bu çalismada, teknolojik uygulamalarda önemli bir yer tutan kuantum noktalarinin elektronik özellikleri incelenmistir. Hesaplamalar efektif kütle yaklasimi içinde sonlu farklar yöntemi ve varyasyon yöntemi kullanilarak yapilmistir. Temel olarak iç içe kübik GaAs/AlxGa1-xAs kuantum noktalari çalisilmistir. Iç içe kübik kuantum noktalari içinde hapsedilen bir elektrona düzgün uygulanan elektrik ve manyetik alanin etkileri arastirilmistir. Bu yapida baglanma enerjisi, bariyer genisligi, elektrik ve manyetik alanlarin fonksiyonu olarak hesaplanmisir. Baglanma enerjisinin degisimlerinin elektronun gördügü potansiyel enerjiye, düzgün uygulanan elektrik ve manyetik alanin siddetine bagli oldugu bulunmustur. Ayrica iç içe kübik kuantum noktalari için baglanma enerjisindeki degisimler bariyer genisligine bagli olarak incelenmistir. Anahtar Kelimeler: Kuantum Noktasi, Elektrik Alan, Manyetik Alan, Baglanma Enerjisi
In this work, the electronic properties of quantum dots, which have a great importance in technological applications, are investigated.The calculations are performed using the finite difference numerical method and variational method within the effective mass approximation.Basically, coaxial cubic GaAs/AlxGa1-xAs quantum dots are studied.The effects of uniform applied electric and magnetic fields on binding energy of an electron confined in the coaxial cubic quantum dot are investigated.In this structure,the binding energy is calculated as functions of the barrier width, electric and magnetic field strengths. It is found that,the changes in the binding energy occurs depending on the magnitude of the confining potential ,and the applied uniform electric and magnetic field strengths.Also, the changes in the binding energy are investigated depending on the barrier width for the coaxial cubic quantum dot. Keywords: Quantum Dot, Electric Field, Magnetic Field, Binding Energy
In this work, the electronic properties of quantum dots, which have a great importance in technological applications, are investigated.The calculations are performed using the finite difference numerical method and variational method within the effective mass approximation.Basically, coaxial cubic GaAs/AlxGa1-xAs quantum dots are studied.The effects of uniform applied electric and magnetic fields on binding energy of an electron confined in the coaxial cubic quantum dot are investigated.In this structure,the binding energy is calculated as functions of the barrier width, electric and magnetic field strengths. It is found that,the changes in the binding energy occurs depending on the magnitude of the confining potential ,and the applied uniform electric and magnetic field strengths.Also, the changes in the binding energy are investigated depending on the barrier width for the coaxial cubic quantum dot. Keywords: Quantum Dot, Electric Field, Magnetic Field, Binding Energy
Açıklama
Yüksek Lisans
Anahtar Kelimeler
Fizik ve Fizik Mühendisliği, Physics and Physics Engineering
