Energy levels of GaAs/AlxGa1-xAs/AlAs spherical quantum dot with an impurity

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dc.authoridBOZ, Figen/0000-0003-3689-0204
dc.authoridOkan, Sevket Erol/0000-0002-1707-2671
dc.authorwosidBOZ, Figen Karaca/IQR-7087-2023
dc.contributor.authorBoz, Figen Karaca
dc.contributor.authorNisanci, Beyza
dc.contributor.authorAktas, Saban
dc.contributor.authorOkan, S. Erol
dc.date.accessioned2024-06-12T11:13:14Z
dc.date.available2024-06-12T11:13:14Z
dc.date.issued2016
dc.departmentTrakya Üniversitesien_US
dc.description.abstractWe have calculated the energy levels and the radial probability distributions of an electron with an impurity in a spherical quantum dot which is layered as GaAs/AlxGa1-xAs/AlAs. The numerical method used is the fourth-order Runge-Kutta method in the framework of the effective mass approximation. The variation of the energy levels have been calculated as functions of the radius of the GaAs sphere and the thickness of AlxGa1-xAs spherical layer considering effective mass and dielectric constant mismatches. The results have presented the importance of the geometry on the electronic properties of the spherical GaAs/AlxGa1-xAs/AlAs quantum dot. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.apsusc.2016.06.035
dc.identifier.endpage81en_US
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.scopus2-s2.0-84975879126en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage76en_US
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2016.06.035
dc.identifier.urihttps://hdl.handle.net/20.500.14551/23475
dc.identifier.volume387en_US
dc.identifier.wosWOS:000381251100010en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectQuantum Doten_US
dc.subjectEnergy Levelen_US
dc.subjectRunge-Kuttaen_US
dc.subjectHydrogenic Impurityen_US
dc.subjectBinding-Energyen_US
dc.subjectDonor Impurityen_US
dc.subjectHydrostatic-Pressureen_US
dc.subjectElectronic-Structureen_US
dc.subjectStatesen_US
dc.subjectComputationen_US
dc.subjectMismatchen_US
dc.titleEnergy levels of GaAs/AlxGa1-xAs/AlAs spherical quantum dot with an impurityen_US
dc.typeArticleen_US

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