Energy levels of GaAs/AlxGa1-xAs/AlAs spherical quantum dot with an impurity
Küçük Resim Yok
Tarih
2016
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We have calculated the energy levels and the radial probability distributions of an electron with an impurity in a spherical quantum dot which is layered as GaAs/AlxGa1-xAs/AlAs. The numerical method used is the fourth-order Runge-Kutta method in the framework of the effective mass approximation. The variation of the energy levels have been calculated as functions of the radius of the GaAs sphere and the thickness of AlxGa1-xAs spherical layer considering effective mass and dielectric constant mismatches. The results have presented the importance of the geometry on the electronic properties of the spherical GaAs/AlxGa1-xAs/AlAs quantum dot. (C) 2016 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Quantum Dot, Energy Level, Runge-Kutta, Hydrogenic Impurity, Binding-Energy, Donor Impurity, Hydrostatic-Pressure, Electronic-Structure, States, Computation, Mismatch
Kaynak
Applied Surface Science
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
387
