Reconstructive sensing circuit for complementary resistive switches-based crossbar memories

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dc.authoridKARAKULAK, Ertugrul/0000-0001-5937-2114
dc.authoridMutlu, Resat/0000-0003-0030-7136
dc.authorwosidUçar, Erdem/G-6929-2014
dc.authorwosidMutlu, Resat/ABA-5309-2020
dc.authorwosidKARAKULAK, Ertugrul/ABA-5752-2020
dc.contributor.authorKarakulak, Ertugrul
dc.contributor.authorMutlu, Resat
dc.contributor.authorUcar, Erdem
dc.date.accessioned2024-06-12T11:08:16Z
dc.date.available2024-06-12T11:08:16Z
dc.date.issued2016
dc.departmentTrakya Üniversitesien_US
dc.description.abstractComplementary resistive switches (CRSs) are suggested as an alternative to one-cell memristor memories to decrease leakage currents. However, their sensing is more difficult and complex than one-cell memristor memories. A method has been given for sensing their state using only DC voltages in the literature. However, in this strategy, sensing one of the logic states results in the destruction of the state and the destroyed state must be written again. To the best of our knowledge, a circuit with this sensing strategy does not exist in the literature yet. In this paper, such a circuit employing this method, which is able to read the CRS cells and able to reconstruct their data if the data are destroyed, is given. A new CRS model is also constructed in this paper and used for simulations to verify the operation of the circuit. The circuit is simulated using Simulink. We expect this circuit implementation to find use in the design and testing of CRS cells.en_US
dc.identifier.doi10.3906/elk-1309-71
dc.identifier.endpage1383en_US
dc.identifier.issn1300-0632
dc.identifier.issn1303-6203
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-84963819703en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage1371en_US
dc.identifier.trdizinid245209en_US
dc.identifier.urihttps://doi.org/10.3906/elk-1309-71
dc.identifier.urihttps://search.trdizin.gov.tr/yayin/detay/245209
dc.identifier.urihttps://hdl.handle.net/20.500.14551/22374
dc.identifier.volume24en_US
dc.identifier.wosWOS:000374121500048en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakTR-Dizinen_US
dc.language.isoenen_US
dc.publisherTubitak Scientific & Technological Research Council Turkeyen_US
dc.relation.ispartofTurkish Journal Of Electrical Engineering And Computer Sciencesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectMemristoren_US
dc.subjectComplementary Resistive Switchesen_US
dc.subjectCRS Modelen_US
dc.subjectSensing Circuitsen_US
dc.subjectResistive RAMen_US
dc.subjectCrossbar Memoryen_US
dc.subjectMemristoren_US
dc.subjectSchemeen_US
dc.subjectModelen_US
dc.titleReconstructive sensing circuit for complementary resistive switches-based crossbar memoriesen_US
dc.typeArticleen_US

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