Reconstructive sensing circuit for complementary resistive switches-based crossbar memories
Küçük Resim Yok
Tarih
2016
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Tubitak Scientific & Technological Research Council Turkey
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Complementary resistive switches (CRSs) are suggested as an alternative to one-cell memristor memories to decrease leakage currents. However, their sensing is more difficult and complex than one-cell memristor memories. A method has been given for sensing their state using only DC voltages in the literature. However, in this strategy, sensing one of the logic states results in the destruction of the state and the destroyed state must be written again. To the best of our knowledge, a circuit with this sensing strategy does not exist in the literature yet. In this paper, such a circuit employing this method, which is able to read the CRS cells and able to reconstruct their data if the data are destroyed, is given. A new CRS model is also constructed in this paper and used for simulations to verify the operation of the circuit. The circuit is simulated using Simulink. We expect this circuit implementation to find use in the design and testing of CRS cells.
Açıklama
Anahtar Kelimeler
Memristor, Complementary Resistive Switches, CRS Model, Sensing Circuits, Resistive RAM, Crossbar Memory, Memristor, Scheme, Model
Kaynak
Turkish Journal Of Electrical Engineering And Computer Sciences
WoS Q Değeri
Q4
Scopus Q Değeri
Q3
Cilt
24
Sayı
3
