Electronic properties of Cr and Mn doped BN nanowires

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dc.authorscopusid57196259408
dc.authorscopusid8729178800
dc.authorscopusid54886315200
dc.contributor.authorÖzkapı S.G.
dc.contributor.authorÖzkapı B.
dc.contributor.authorDalgıç S.
dc.date.accessioned2024-06-12T10:26:21Z
dc.date.available2024-06-12T10:26:21Z
dc.date.issued2018
dc.description6th International Conference on Nanostructures, Nanomaterials and Nanoengineering, ICNNN 2017 and 2nd International Conference on Materials Technology and Applications, ICMTA 2017 -- 26 October 2017 through 29 October 2017 -- -- 212509en_US
dc.description.abstractIn this work, we have investigated electronic structures of pure and doped (with Cr and Mn atoms, separately) BN nanowires along [001] direction with zinc blende phase by means of density functional theory calculations. Our results show that the substitution doping of nanowires by Cr and Mn atoms decrases the band gaps of the all BN nanowires. Also, spin polarized calculations exhibit that the density of states (DOS) for spin up and spin down electrons are antisymmetric structure for both Cr and Mn doped BN nanowires. All these show that doped BN nanowire systems have potential applications in electronics and spintronics. © 2018 Trans Tech Publications, Switzerland.en_US
dc.identifier.doi10.4028/www.scientific.net/MSF.916.69
dc.identifier.endpage73en_US
dc.identifier.isbn9.78304E+12
dc.identifier.issn0255-5476
dc.identifier.scopus2-s2.0-85045295741en_US
dc.identifier.scopusqualityQ4en_US
dc.identifier.startpage69en_US
dc.identifier.urihttps://doi.org/10.4028/www.scientific.net/MSF.916.69
dc.identifier.urihttps://hdl.handle.net/20.500.14551/16789
dc.identifier.volume916 MSFen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherTrans Tech Publications Ltden_US
dc.relation.ispartofMaterials Science Forumen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBn Nanowires; Electronic Structure; First Principles Method; Tm Doped Nanowiresen_US
dc.subjectCalculations; Density Functional Theory; Electronic Properties; Electronic Structure; Energy Gap; Manganese; Nanowires; Zinc Sulfide; Anti-Symmetric; Density Of State; First Principles Method; Spin-Down Electrons; Spin-Polarized; Substitution Doping; Tm-Doped; Zinc Blende; Chromiumen_US
dc.titleElectronic properties of Cr and Mn doped BN nanowiresen_US
dc.typeConference Objecten_US

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