Electronic properties of Cr and Mn doped BN nanowires
Küçük Resim Yok
Tarih
2018
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Trans Tech Publications Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this work, we have investigated electronic structures of pure and doped (with Cr and Mn atoms, separately) BN nanowires along [001] direction with zinc blende phase by means of density functional theory calculations. Our results show that the substitution doping of nanowires by Cr and Mn atoms decrases the band gaps of the all BN nanowires. Also, spin polarized calculations exhibit that the density of states (DOS) for spin up and spin down electrons are antisymmetric structure for both Cr and Mn doped BN nanowires. All these show that doped BN nanowire systems have potential applications in electronics and spintronics. © 2018 Trans Tech Publications, Switzerland.
Açıklama
6th International Conference on Nanostructures, Nanomaterials and Nanoengineering, ICNNN 2017 and 2nd International Conference on Materials Technology and Applications, ICMTA 2017 -- 26 October 2017 through 29 October 2017 -- -- 212509
Anahtar Kelimeler
Bn Nanowires; Electronic Structure; First Principles Method; Tm Doped Nanowires, Calculations; Density Functional Theory; Electronic Properties; Electronic Structure; Energy Gap; Manganese; Nanowires; Zinc Sulfide; Anti-Symmetric; Density Of State; First Principles Method; Spin-Down Electrons; Spin-Polarized; Substitution Doping; Tm-Doped; Zinc Blende; Chromium
Kaynak
Materials Science Forum
WoS Q Değeri
Scopus Q Değeri
Q4
Cilt
916 MSF
