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Öğe Control of a resonant tunneling structure by intense laser fields(Academic Press Ltd- Elsevier Science Ltd, 2016) Aktas, S.; Kes, H.; Boz, F. K.; Okan, S. E.The intense laser field effects on a resonant tunneling structure were studied using computational methods. The considered structure was a GaAs/InxGa1-xAs/Al0.3Ga0.7As/InyGa1-yAs/AlAs/GaAs well-barrier system. In the presence of intense laser fields, the transmission coefficient and the dwell time of the structure were calculated depending on the depth and the width of InGaAs wells. It was shown that an intense laser field provides full control on the performance of the device as the geometrical restrictions on the resonant tunneling conditions overcome. Also, the choice of the resonant energy value becomes possible depending on the field strength. (C) 2016 Elsevier Ltd. All rights reserved.Öğe The Effect on the Optical Absorption Coefficients due to the Positions in the Plane of Square GaAs/Al(GaAs) Quantum Well Wire under the Laser Field(Polish Acad Sciences Inst Physics, 2019) Bekar, B.; Boz, F. K.; Aktas, S.; Okan, S. E.The laser field effects on the electronic and optical properties depending on two different positions in the plane of GaAs/Al (GaAs) quantum wire with square cross sections have been investigated. The electron energy levels and the electronic wave functions of the wires are calculated using the finite differences method within the effective mass approximation. The differences of the total absorption coefficients and the reflection index changes sourced from the cross-sectional shape were determined and explained with and without laser field. From the results the blue shift and red shift effects on the total absorption coefficients and the reflection index changes were identified depending on the laser field strength and the positions of square GaAs/Al(GaAs) quantum well wire in the plane.Öğe Electric and magnetic field effects on the binding energy of a hydrogenic impurity in quantum well wires with different shapes(Academic Press Ltd- Elsevier Science Ltd, 2008) Bilekkaya, A.; Aktas, S.; Okan, S. E.; Boz, F. K.In this work, we directly calculate the ground state energies for an electron in quantum well wires (QWWs) with different shapes in the presence of applied electric and magnetic fields using the finite difference method. Then, we study the ground state binding energy of a hydrogenic impurity with a variational approach. We obtain the binding energy for QWWs consisting of the combinations of square and parabolic well potential. Our results indicate that the impurity binding energy depends strongly on the structural confinement and also, on the applied electric and magnetic field. (c) 2008 Elsevier Ltd. All rights reserved.Öğe Electron transmission in symmetric and asymmetric double-barrier structures controlled by laser fields(Academic Press Ltd- Elsevier Science Ltd, 2015) Aktas, S.; Bilekkaya, A.; Boz, F. K.; Okan, S. E.The potential profiles of symmetric and asymmetric rectangular double-barrier structures made of (Ga, Al)As/GaAs and the transmission coefficient of an electron in these systems have been investigated under intense laser field. The results show that the field alters the potential profile, and the transmission coefficient can thus be controlled. The transmission at the first resonance energy for the symmetric structure is higher than that of the asymmetric structure. Therefore, the symmetric design is feasible. The properties exhibited in this work may establish guidance to device applications. (C) 2015 Elsevier Ltd. All rights reserved.Öğe The electronic properties of a coaxial square GaAs/AlxGa1-xAs quantum well wire in an electric field(Elsevier Science Bv, 2009) Aktas, S.; Boz, F. K.; Bilekkaya, A.; Okan, S. E.The binding energy of a hydrogenic impurity in a coaxial square quantum well wire (QWW) system is investigated as a function of the barrier thickness for two different impurity positions under the electric fields. Within the effective mass approximation, the ground state energy in the presence of an external electric field applied perpendicular to the symmetry axis of the wire system is calculated using the finite difference method. Then, the ground state binding energy of a hydrogenic impurity is found employing a variational method. It is found that the binding energy in critical barrier thickness shows an increase or decrease depending on the impurity position and electric field strength. (C) 2009 Elsevier B.V. All rights reserved.Öğe Laser field-driven potential profiles of double quantum wells(Elsevier Science Bv, 2012) Boz, F. K.; Aktas, S.; Bekar, B.; Okan, S. E.We study the potential profiles of double quantum wells with different geometries. The binding energy of an impurity under a laser field and its simultaneous application with a magnetic field is calculated by means of variational techniques. It is shown that the total potential of the structure suggests a strong control mechanism on the binding energy. (C) 2011 Elsevier B.V. All rights reserved.Öğe The multilayered spherical quantum dot under a magnetic field(Elsevier Science Bv, 2010) Boz, F. K.; AktasA, S.; Bilekkaya, A.; Okan, S. E.The binding energy of an impurity located at the center of multilayered spherical quantum dot (MSQD) is reported as a function of the dot and barrier thickness for different alloy compositions under the influence of a magnetic field. Within the effective mass approximation, the binding energy has been calculated using the fourth order Runge-Kutta method without magnetic field. A variational approach has been employed if a magnetic field is present. The binding energy in MSQD with equal dot and barrier thickness is calculated. It is shown that the binding energy in MSQD differs from that of a single quantum dot. Also, the geometry is dominant on the binding energy for thin MSQDs, but the magnetic field becomes more effective for thick MSQDs. (C) 2010 Elsevier B.V. All rights reserved.
