Control of a resonant tunneling structure by intense laser fields
Küçük Resim Yok
Tarih
2016
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Academic Press Ltd- Elsevier Science Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The intense laser field effects on a resonant tunneling structure were studied using computational methods. The considered structure was a GaAs/InxGa1-xAs/Al0.3Ga0.7As/InyGa1-yAs/AlAs/GaAs well-barrier system. In the presence of intense laser fields, the transmission coefficient and the dwell time of the structure were calculated depending on the depth and the width of InGaAs wells. It was shown that an intense laser field provides full control on the performance of the device as the geometrical restrictions on the resonant tunneling conditions overcome. Also, the choice of the resonant energy value becomes possible depending on the field strength. (C) 2016 Elsevier Ltd. All rights reserved.
Açıklama
Anahtar Kelimeler
Resonant Tunneling, Transmission Coefficient, Resonance Energy, Dwell Time, Laser Field, Double-Barrier Structures, Hot-Electron Transistor, Vertical Transport, Quantum-Well, Diodes, Time, Heterostructures, Transmission, Radiation
Kaynak
Superlattices And Microstructures
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
98
