Erdogan, IYavuz, S.2024-06-122024-06-1220210921-45261873-2135https://doi.org/10.1016/j.physb.2020.412728https://hdl.handle.net/20.500.14551/23480The self-polarization and donor binding energy are calculated for a square Ga1?xAlxAs/GaAs quantum well under an laser field. The donor binding energy and self-polarization are obtained as a function of the laser field parameter, donor impurity position and quantum well-width. The calculations are made by means of variational and finite differences methods using the effective-mass approximation. Our results show that the laser field has remarkable effect on the self-polarization and donor binding energy. These results can be useful for studies on the electronic and optical properties of a quantum well under the influence of a laser field.en10.1016/j.physb.2020.412728info:eu-repo/semantics/closedAccessQuantum We L LLaser FieldDonor ImpurityBind I N G EnergySelf-PolarizationVariational MethodsBinding-EnergyElectric-FieldHydrostatic-PressureIntersubband TransitionsIntenseSquareDotsWiresPolarizabilityAbsorptionArticle609Q3WOS:0006437090000052-s2.0-85101875049Q2