Cicek, E.Mese, A., IOzkapi, B.Erdogan, I2024-06-122024-06-1220210749-60361096-3677https://doi.org/10.1016/j.spmi.2021.106904https://hdl.handle.net/20.500.14551/21674In this study, the self-polarization and binding energy of the donor impurity atom in the laser field applied Ga1_xAlxAs/GaAs quantum well are investigated under the combined influence of hydrostatic pressure and temperature. Variation of self-polarization and binding energy depending on temperature, hydrostatic pressure, impurity position, well width and laser field parameters are shown. Using the effective mass approximation, subband energy has been found by finite difference method and impurity energy has been found by variation method. Our results showed that hydrostatic pressure and temperature have a noticeable effect on the calculated selfpolarization and binding energy in a quantum well under the effect of the laser field. We think that the results obtained will be useful in determining the physical properties of the quantum well under the influence of laser field, hydrostatic pressure and temperature.en10.1016/j.spmi.2021.106904info:eu-repo/semantics/closedAccessHydrostatic PressureTemperatureLaser FieldSelf-PolarizationBinding EnergyQuantum WellHydrogenic Donor ImpurityBinding-EnergyDiamagnetic SusceptibilityOptical-PropertiesDressed DonorIntenseDotTransitionsExcitonsStatesArticle155Q2WOS:0006543212000032-s2.0-85107691608Q2