Dane, C.Akbas, H.Minez, S.Guleroglu, A.2024-06-122024-06-1220081386-94771873-1759https://doi.org/10.1016/j.physe.2008.07.016https://hdl.handle.net/20.500.14551/24464Using a variational procedure within the effective-mass approximation we calculate the binding and normalized binding energy (NEbF) of a shallow donor impurity in a GaAs/AlAs spherical quintum dot, under the action of constant uniform electric field applied in the z-direction. A proper choice of the dot radius and electric field call largely change NEbF of a centre shallow impurity in the spherical quantum dot, which may be used to feel the small change in the dot radius. (C) 2008 Elsevier B.V. All rights reserved.en10.1016/j.physe.2008.07.016info:eu-repo/semantics/closedAccessTurning PointSpherical DotImpurityNormalized Binding EnergyBinding-EnergyDonor StatesParabolic ConfinementImpurity StatesMagnetic-FieldShallow DonorArticle412278281Q3WOS:0002614818000192-s2.0-55249108438Q2