Ozkapi, B.Guler, S.Dalgic, S.2024-06-122024-06-1220111454-41641841-7132https://hdl.handle.net/20.500.14551/21570We present results for electronic and structural properties of large lattice mismatched Si/BP superlattice by first principle calculations based on the density functional theory. A self-consistent pseudopotential calculation has been pet-formed at Si/BP (001) strained interface. We also analyze the total energy of ground state, lattice constant and electrostatic potential line up of heterojunction between Si/BP zincblende compounds. Finally, we have investigated electronic band structure and the effect to electrostatic potential line up of structural details at interface of this system.eninfo:eu-repo/semantics/closedAccessHeterostructureSuperlatticeElectrostatic PotentialElectronic Band StructureLight-Emitting-DiodesBuffer LayerGanSiliconGrowthSubstrateSapphireSi(111)BpEpitaxyArticle1311-1215021506Q4WOS:000298834200028