Akbas, H.Dane, C.Erdogan, I.Akankan, O.2024-06-122024-06-1220141386-94771873-1759https://doi.org/10.1016/j.physe.2014.03.003https://hdl.handle.net/20.500.14551/23486In this work we study the effects of barrier height ratio V-L/V-R on asymmetric AlxLGa1-xLAs/GaAs/AlxRGa1-xRAs quantum wells in absence of external influences. We use a variational method within the effective mass approximation to observe the effects of the barrier height ratio. It has been observed that the binding energy of the impurity, the expectation value of the electron-impurity distance along the z-direction, density of impurity states, and edge binding energy difference depend strongly on the barrier height ratio. Furthermore we present new curves that analyze the binding energy of asymmetric quantum wells as functions of barrier height ratio. (C) 2014 Elsevier B.V. All rights reserved.en10.1016/j.physe.2014.03.003info:eu-repo/semantics/closedAccessQuantum WellBinding EnergyDensity Of Impurity StatesImpurity PositionShallow Impurity StatesApplied Electric-FieldHydrostatic-PressureBinding-EnergyCross-SectionDensityTemperatureSpectraArticle60196199Q2WOS:0003376531000312-s2.0-84897008665Q2