Dane, C.Akbas, H.Guleroglu, A.Minez, S.Kasapoglu, K.2024-06-122024-06-1220111386-94771873-1759https://doi.org/10.1016/j.physe.2011.08.012https://hdl.handle.net/20.500.14551/25150A theoretical study of combined effects of the hydrostatic pressure and the electric field on the subband ground state energy and on the normalized ground state binding energy of a hydrogenic donor impurity on center located in a GaAs/AlAs spherical quantum dot with fixed dot radius is presented. The study is performed in the framework of the effective mass and parabolic band approximations and using a variational procedure. As a key result, it may be possible to gather high resolution maps of electric field on the studied structure with described technique. (C) 2011 Elsevier B.V. All rights reserved.en10.1016/j.physe.2011.08.012info:eu-repo/semantics/closedAccessMagnetic-FieldDonor ImpurityStatesWellsTemperatureWiresThe hydrostatic pressure and electric field effects on the normalized binding energy of hydrogenic impurity in a GaAs/AlAs spherical quantum dotArticle441186189Q3WOS:0002974336000322-s2.0-80054689558Q2