Akbas, H.Erdogan, I.Akankan, O.2024-06-122024-06-1220110749-6036https://doi.org/10.1016/j.spmi.2011.05.006https://hdl.handle.net/20.500.14551/23487Within the framework of effective-mass approximation, we have studied the effects of hydrostatic pressure on the binding energy of a shallow donor impurity in an infinite quantum well by means of a variational method. It is found that the first derivative of the binding energy and energy shift is reliable parameter for describing the structure. (C) 2011 Elsevier Ltd. All rights reserved.en10.1016/j.spmi.2011.05.006info:eu-repo/semantics/closedAccessQuantum WellDonor ImpurityHydrostatic PressureBinding EnergyApplied Electric-FieldBinding-EnergiesDonor ImpurityTransitionGaasDependenceStressHydrostatic pressure effects on impurity states in GaAs/AlAs quantum wellsArticle5018089Q3WOS:0002928551000092-s2.0-79958799325Q2