Ozkisi, HarunOzkapi, BarisOzkapi, Sena GulerDalgic, Seyfettin2024-06-122024-06-1220172214-7853https://hdl.handle.net/20.500.14551/212877th International Conference on Advanced Nanomaterials (ANM) -- JUL 25-27, 2016 -- Univ Aveiro, Aveiro, PORTUGALIn this study, we investigate electronic band structures of Te-doped GaN nanowires with three different radii using the first principles methods, which is based on the density functional theory. The relaxed structures, total energies and electronic band structures of pure and Te-doped GaN nanowires are calculated. The results show that the energy band gap values reduce when GaN nanowires are doped with a Te atom. While the band gap values of pure GaN nanowires increase with increasing nanowire radius, they present a decrease for Te-doped GaN nanowires. (C) 2016 Elsevier Ltd. All rights reserved.eninfo:eu-repo/semantics/closedAccessGan NanowiresDopingElectronic PropertiesFirst Principles MethodConference Object4111164011643N/AWOS:0004165702000192-s2.0-85032452086Q2