Aktas, S.Kes, H.Boz, F. K.Okan, S. E.2024-06-122024-06-1220160749-6036https://doi.org/10.1016/j.spmi.2016.08.018https://hdl.handle.net/20.500.14551/23603The intense laser field effects on a resonant tunneling structure were studied using computational methods. The considered structure was a GaAs/InxGa1-xAs/Al0.3Ga0.7As/InyGa1-yAs/AlAs/GaAs well-barrier system. In the presence of intense laser fields, the transmission coefficient and the dwell time of the structure were calculated depending on the depth and the width of InGaAs wells. It was shown that an intense laser field provides full control on the performance of the device as the geometrical restrictions on the resonant tunneling conditions overcome. Also, the choice of the resonant energy value becomes possible depending on the field strength. (C) 2016 Elsevier Ltd. All rights reserved.en10.1016/j.spmi.2016.08.018info:eu-repo/semantics/closedAccessResonant TunnelingTransmission CoefficientResonance EnergyDwell TimeLaser FieldDouble-Barrier StructuresHot-Electron TransistorVertical TransportQuantum-WellDiodesTimeHeterostructuresTransmissionRadiationArticle98220227Q2WOS:0003871947000262-s2.0-84983605175Q2