Mese, AIOkan, SE2024-06-122024-06-1220040370-19721521-3951https://doi.org/10.1002/pssb.200402100https://hdl.handle.net/20.500.14551/25058The ground state binding energy of a hydrogenic impurity in infinite cylindrical GaAs quantum well wires subjected to an external electric field applied perpendicular to the symmetry axis of the wire is studied within the relativistic approach. A rapid decrease of the binding energy for different intensities of the electric field with increasing wire radius is predicted. Furthermore. the relativistic effects are emphasised by comparing them with the non-relativistic results. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en10.1002/pssb.200402100info:eu-repo/semantics/closedAccessHigh Magnetic-FieldShallow DonorSemiconductorsStatesArticle2411535253531N/AWOS:0002258076000132-s2.0-10844248029Q3