Mese, A., I2024-06-122024-06-1220210749-60361096-3677https://doi.org/10.1016/j.spmi.2021.106932https://hdl.handle.net/20.500.14551/23956We report the results of the normalized transition energies between 1s and 1p states in a spherical quantum dot with radius R at temperatures T = 0 and T = 300K. Using the normalized transition energy, it is possible to determine the location of an impurity in the SQD under examination by measuring the intradonor transition energy, and to obtain high-resolution maps of the impurity location (ri) for ri < 3R/4 and 1.3 a* < R 1.6 a*. Also, for the impurity location at ri 3R/4, T and R have no influence on the normalized transition energy.en10.1016/j.spmi.2021.106932info:eu-repo/semantics/closedAccessSpherical DotDonor ImpurityTransition EnergyNormalized EnergyHydrogenic Donor ImpurityIntense Laser FieldBinding-EnergyHydrostatic-PressureOptical-PropertiesMagnetic-FieldElectric-FieldSelf-PolarizationIntersubband TransitionsAbsorption-CoefficientsThe normalized transition energies between ground (1s) and first excited (1p) states in a GaAs/Ga1-xAlxAs spherical quantum dot (SQD)Article156Q2WOS:0006873272000042-s2.0-85106357848Q2