Okan, S. ErolBoz, Figen KaracaAktas, Saban2024-06-122024-06-1220190749-6036https://doi.org/10.1016/j.spmi.2019.106207https://hdl.handle.net/20.500.14551/23602Several resonance-tunneling diodes are modelled for a fixed resonance energy. The theoretically suggested diodes are classified according to their local potentials differed by the doping concentrations. The electronic properties of the diodes are explored in the framework of numerical calculations. In addition, the laser field effects on the latter properties are reported. They show that the laser field application enriches the functionality of these devices in applications.en10.1016/j.spmi.2019.106207info:eu-repo/semantics/closedAccessResonance TunnelingDiodeLaser FieldCurrent-Voltage CharacteristicsElectronic TransmissionBarrierTransportTimeSimulationGaasArticle133Q3WOS:0004871713000202-s2.0-85073655094Q2