Erdogan, I.Akankan, O.Akbas, H.2024-06-122024-06-1220130749-6036https://doi.org/10.1016/j.spmi.2013.03.020https://hdl.handle.net/20.500.14551/23773Based on the effective mass approximation within a variational approach, we have calculated the temperature effect on the donor binding energy, self-polarization (SP), and electric field polarization (FP) in a GaAs/Ga0.7Al0.3As spherical quantum dot (SQD) with off center donor impurity under the action of electric field and hydrostatic pressure. The binding energy and polarizations are computed as a function of the temperature, and electric field strength for two different pressures. The results show that the values of the self-polarization are greater than the values of the electric field polarization. There are no reports on comparison of the SP and FP in low-dimensional structures, so far. (C) 2013 Published by Elsevier Ltd.en10.1016/j.spmi.2013.03.020info:eu-repo/semantics/closedAccessSelf-PolarizationQuantum DotTemperatureHydrostatic PressureElectric FieldBinding-EnergyStatesGaas-(GaArticle591320Q2WOS:0003202920000022-s2.0-84876929766Q2