Aktas, SOkan, SEAkbas, H2024-06-122024-06-1220010749-6036https://doi.org/10.1006/spmi.2001.1004https://hdl.handle.net/20.500.14551/20573The ground state binding energy of a hydrogenic impurity in a coaxial cylindirical quantum well wire system subjected to an external electric field applied perpendicular to the symmetry axis of the wire system is studied within a variational scheme. Binding energy calculations were performed as functions of the inner barrier thickness and the electric field for two different impurity positions. The main result is that a sharp decrease in the binding energy, which may be important in device applications, occurs in certain conditions. (C) 2001 Academic Press.en10.1006/spmi.2001.1004info:eu-repo/semantics/closedAccessDouble Quantum Well WiresBinding EnergyElectric FieldShallow Donor ImpuritiesExcited-StatesPolarizabilityDotsElectric field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/AlxGa1-xAs quantum well-wiresArticle303129134Q3WOS:0001728591000022-s2.0-0035661958Q2