Okan, SEAktas, SAkbas, HTomak, M2024-06-122024-06-1219990370-1972https://doi.org/10.1002/(SICI)1521-3951(199904)212:2<263https://hdl.handle.net/20.500.14551/24957The exciton transition energies between valence and conduction subbands of symmetric double quantum wells are studied. To study the effect of geometry coupled wells of rectangular, graded and parabolic shapes are considered. A special emphasis is given to the study of crossover between the symmetric light-hole (e1-11) and the antisymmetric heavy-hole (e2-h2) transitions.en10.1002/(SICI)1521-3951(199904)212:2<263info:eu-repo/semantics/closedAccessElectric-FieldIntersubband TransitionsBinding-EnergiesFano ResonancesSpectraElectroabsorptionThe exciton transition energies in symmetric double GaAs/AlxGa1-xAs quantum wellsArticle2122263270Q3WOS:0000798243000072-s2.0-0033239911Q3