Akbaş H.Aktaş S.Okan S.E.Ulaş M.Tomak M.2024-06-122024-06-1219980370-1972https://doi.org/10.1002/(SICI)1521-3951(199802)205:2<537https://hdl.handle.net/20.500.14551/15973The valence subband energies in the presence of an electric-field are calculated using the fourth-order Runge-Kutta method. The 1s-and 2p+-like acceptor states in the presence of a magnetic field are then calculated variationally. The effects of the spatially dependent screening function ?(r) on the calculation of the transition energies are specifically investigated. The use of a constant ?0 is shown to yield better agreement with experimental results.en10.1002/(SICI)1521-3951(199802)205:2<537info:eu-repo/semantics/closedAccess[Abstarct Not Available]Acceptor 1s-2p± transitions in GaAs/Ga0.7Al0.3As quantum wells: Effects of spatially dependent screening under electric and magnetic fieldsArticle20525375422-s2.0-0040581733Q3