Bulut E.B.Gulbahce M.O.Kocabas D.A.Dusmez S.2024-06-122024-06-1220219.7838E+122191-3358https://hdl.handle.net/20.500.14551/176882021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 -- 3 May 2021 through 7 May 2021 -- -- 172114GaN power switches enable ultra-fast switching speeds, yet, the maximum gate drive strength is mainly limited by the voltage overshoot across drain-source junction. There is a complex relationship between the power loop inductance, gate resistance, load current, parasitic capacitances of the GaN FET and the resultant voltage ringing. In this paper, a simplified method to relate the gate drive strength with the voltage overshoot is presented. With this approach, it is possible to find a maximum achievable dV/dt for different GaN FETs as well as various board and package parasitics under different operating conditions, which helps designers to identify and compare I-V overlap losses of various GaN FETs without running SPICE models. © VDE VERLAG GMBH · Berlin · Offenbach.eninfo:eu-repo/semantics/closedAccessEnergy Management; Gallium Nitride; Iii-V Semiconductors; Intelligent Robots; Power Electronics; Voltage Regulators; Drain Sources; Fast Switching; Gan Power Devices; Gate Drives; Power-Switches; Simplified Method; Source Junctions; Switching Speed; Ultra-Fast; Voltage Overshoot; CapacitanceConference Object2021-May1451522-s2.0-85117709669N/A