Erdogan, I.Akankan, O.Akbas, H.2024-06-122024-06-1220091386-94771873-1759https://doi.org/10.1016/j.physe.2009.09.014https://hdl.handle.net/20.500.14551/23490In this work we have calculated the hydrostatic pressure and the electric field effect on the self-polarization (SP) in GaAs/Ga1-xAlx As quantum well, The binding energies of donors and the self-polarization in quantum wells are investigated with a variational method considering the influence of finite barriers under hydrostatic pressure. In calculations, we take into account the electronic effective mass, dielectric constant, barrier height, well size, varying with pressure. We find that the effect of hydrostatic pressure on the self-polarization depends on value of the well widths and applied electric fields. (C) 2009 Elsevier B.V. All rights reserved.en10.1016/j.physe.2009.09.014info:eu-repo/semantics/closedAccessQuantum WellHydrostatic PressureElectric FieldSelf-PolarizationBinding-EnergyAnomalous PolarizationShallow DonorWiresPolarizabilityImpurityDotsGaas-(GaPolaronEffects of hydrostatic pressure on the self-polarization in GaAs/Ga1-x Alx As quantum wells under the electric fieldArticle422136140Q3WOS:0002729082000102-s2.0-70449729386Q2