Akankan, O.Erdogan, I.Mese, A. I.Cicek, E.Akbas, H.2024-06-122024-06-1220210973-14580974-9845https://doi.org/10.1007/s12648-020-01813-4https://hdl.handle.net/20.500.14551/24209Using the variational method within the effective-mass approximation, the effects of geometrical shape and impurity position on the ground-state self-polarization and binding energy of a donor impurity are theoretically studied for the infinite GaAs/AlAs tetragonal quantum dot. We have found that the ground-state self-polarization and binding energy depend on geometrical shape and impurity-AlAs layer distance.en10.1007/s12648-020-01813-4info:eu-repo/semantics/closedAccessTetragonal Quantum DotGround StateSubband EnergyDonor ImpurityBinding EnergySelf-PolarizationSpatial Electric-FieldBinding-EnergyHydrostatic-PressurePhase-TransitionTemperaturePolarizabilityAbsorptionLaserWireMassArticle95713411344Q3WOS:0005537200000012-s2.0-85088785876Q3