Özkapı S.G.Özkapı B.Dalgıç S.2024-06-122024-06-1220189.78304E+120255-5476https://doi.org/10.4028/www.scientific.net/MSF.916.69https://hdl.handle.net/20.500.14551/167896th International Conference on Nanostructures, Nanomaterials and Nanoengineering, ICNNN 2017 and 2nd International Conference on Materials Technology and Applications, ICMTA 2017 -- 26 October 2017 through 29 October 2017 -- -- 212509In this work, we have investigated electronic structures of pure and doped (with Cr and Mn atoms, separately) BN nanowires along [001] direction with zinc blende phase by means of density functional theory calculations. Our results show that the substitution doping of nanowires by Cr and Mn atoms decrases the band gaps of the all BN nanowires. Also, spin polarized calculations exhibit that the density of states (DOS) for spin up and spin down electrons are antisymmetric structure for both Cr and Mn doped BN nanowires. All these show that doped BN nanowire systems have potential applications in electronics and spintronics. © 2018 Trans Tech Publications, Switzerland.en10.4028/www.scientific.net/MSF.916.69info:eu-repo/semantics/closedAccessBn Nanowires; Electronic Structure; First Principles Method; Tm Doped NanowiresCalculations; Density Functional Theory; Electronic Properties; Electronic Structure; Energy Gap; Manganese; Nanowires; Zinc Sulfide; Anti-Symmetric; Density Of State; First Principles Method; Spin-Down Electrons; Spin-Polarized; Substitution Doping; Tm-Doped; Zinc Blende; ChromiumConference Object916 MSF69732-s2.0-85045295741Q4