Aktas, SabanBoz, Figen Karaca2024-06-122024-06-1220081386-94771873-1759https://doi.org/10.1016/j.physe.2007.09.192https://hdl.handle.net/20.500.14551/19086The binding energy of a hydrogenic impurity of a multilayered spherical GaAs-(Ga,Al)As quantum dot has been investigated as a function of the barrier thickness and the inner dot thickness for various barrier potentials in the effect of the band non-parabolicity. Within the effective mass approximation, the ground state energy has been calculated using the fourth-order Runge-Kutta method. The ground state binding energy of hydrogenic impurity located at the center of a quantum dot has been studied with a variational approach. We have found that a variation in the binding energy has depended on the geometry of the dot. (c) 2007 Elsevier B.V. All rights reserved.en10.1016/j.physe.2007.09.192info:eu-repo/semantics/closedAccessBinding EnergyQuantum DotMagnetic-FieldDonor StatesParabolic ConfinementPerturbation CalculationShallow DonorWell-WiresNonparabolicityPolarizabilityElectronPolaronArticle404753758Q3WOS:0002543712000062-s2.0-38949179574Q2