Dalgic, SUlas, MOzkapi, B2024-06-122024-06-1220051454-41641841-7132https://hdl.handle.net/20.500.14551/238102nd International Workshop on Amorphous and Nanostructured Chalcogenides -- JUN 20-24, 2005 -- Sinaia, ROMANIAWe have used a variational technique to calculate the effect of an electric field on the non-hydrogenic binding energy of a donor impurity in a square GaAs/Ga1-x AlxAs quantum well wire (QWW). The non-hydrogenic binding energy of the donor impurity was calculated by the variational method as a function of applied electric field, the wire radius and donor impurity position. The results show that the non-hydrogenic binding energy of donar impurity located around the centre is larger than that of the hydrogenic binding energy. In this work, the variational method employed is capable of giving all the correct trends for impurity binding energies as a function of applied electric field, impurity position and screening effect.eninfo:eu-repo/semantics/closedAccessShallow DonorsSquare Quantum Well WiresElectrical FieldHydrogenic ImpurityShallow-DonorStatesPolarizabilityPolarizationDependenceConference Object7420412046Q2WOS:0002314065000472-s2.0-24644442627Q4