Dalgic, S.Ozkapi, B.2024-06-122024-06-1220091454-41641841-7132https://hdl.handle.net/20.500.14551/23481The effects of the electric field and concentration on the non-hydrogenic binding energy of a shallow donor impurity in a finite cylindrical quantum well wire (CQWW) of GaAs/ AlxGa1-xAs was investigated. Within the effective mass approximation, we have calculated the non-hydrogenic binding energy of donor impurity by a variational method as a function of applied electric field, the wire radius, donor impurity positions and concentration of Al. We have investigated the concentration effect of Al on the non-hydrogenic binding energy as a function of electric field, wire radius and impurity position in QWW. It is shown that the difference in donor binding energy in the hydrogenic and non-hydrogenic regimes varies with radius of QWWs and impurity position while the interplay of the electric field is the same.eninfo:eu-repo/semantics/closedAccessQuantum Well WireDonor ImpurityElectric Field And Concentration EffectsCross-SectionHydrogenic ImpuritiesSelf-PolarizationShallow DonorsStatesPolarizabilityDependenceDensityArticle111221202125Q4WOS:000273490800040