Özkişi H.Dalgıç S.2024-06-122024-06-1220189.78304E+120255-5476https://doi.org/10.4028/www.scientific.net/MSF.916.45https://hdl.handle.net/20.500.14551/167876th International Conference on Nanostructures, Nanomaterials and Nanoengineering, ICNNN 2017 and 2nd International Conference on Materials Technology and Applications, ICMTA 2017 -- 26 October 2017 through 29 October 2017 -- -- 212509Recently, it has become indispensable to use semiconducting nanostructures in the production and development of electronic devices. In this study, the bulk and nanowire heterostructures of the BP / GaN system have been investigated for the structures pure and Te atom doped. In calculations, the plane wave self consistent field program based on density functional theory was used. The average potentials of the aforementioned systems have been calculated and the interface effect has investigated. © 2018 Trans Tech Publications, Switzerland.en10.4028/www.scientific.net/MSF.916.45info:eu-repo/semantics/closedAccessBp/Gan Nanowires; Density Functional Theory; DopingDoping (Additives); Nanowires; Average Potential; Electronic Device; Interface Effect; Nanowire Heterostructures; Plane Wave; Self-Consistent Field; Semiconducting Nanostructures; Density Functional TheoryConference Object916 MSF45492-s2.0-85045326334Q4