Hydrostatic pressure effects on impurity states in GaAs/AlAs quantum wells
Küçük Resim Yok
Tarih
2011
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Academic Press Ltd- Elsevier Science Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Within the framework of effective-mass approximation, we have studied the effects of hydrostatic pressure on the binding energy of a shallow donor impurity in an infinite quantum well by means of a variational method. It is found that the first derivative of the binding energy and energy shift is reliable parameter for describing the structure. (C) 2011 Elsevier Ltd. All rights reserved.
Açıklama
Anahtar Kelimeler
Quantum Well, Donor Impurity, Hydrostatic Pressure, Binding Energy, Applied Electric-Field, Binding-Energies, Donor Impurity, Transition, Gaas, Dependence, Stress
Kaynak
Superlattices And Microstructures
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
50
Sayı
1
