Acceptor 1s-2p± transitions in GaAs/Ga0.7Al0.3As quantum wells

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dc.contributor.authorAkbas, H
dc.contributor.authorAktas, S
dc.contributor.authorOkan, SE
dc.contributor.authorUlas, M
dc.contributor.authorTomak, M
dc.date.accessioned2024-06-12T11:19:59Z
dc.date.available2024-06-12T11:19:59Z
dc.date.issued1998
dc.departmentTrakya Üniversitesien_US
dc.description.abstractThe valence subband energies in the presence of an electric-field are calculated using the fourth-order Runge-Kutta method. The 1s- and 2p(+/-)-like acceptor states in the presence of a magnetic field are then calculated variationally. The effects of the spatially dependent screening function epsilon(r) on the calculation of the transition energies are specifically investigated. The use of a constant epsilon(o) is shown to yield better agreement with experimental results.en_US
dc.identifier.doi10.1002/(SICI)1521-3951(199802)205:2<537
dc.identifier.endpage542en_US
dc.identifier.issn0370-1972
dc.identifier.issue2en_US
dc.identifier.startpage537en_US
dc.identifier.urihttps://doi.org/10.1002/(SICI)1521-3951(199802)205:2<537
dc.identifier.urihttps://hdl.handle.net/20.500.14551/25409
dc.identifier.volume205en_US
dc.identifier.wosWOS:000072138300015en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.relation.ispartofPhysica Status Solidi B-Basic Researchen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSpectraen_US
dc.subjectStatesen_US
dc.subjectDonorsen_US
dc.titleAcceptor 1s-2p± transitions in GaAs/Ga0.7Al0.3As quantum wellsen_US
dc.typeArticleen_US

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