Acceptor 1s-2p± transitions in GaAs/Ga0.7Al0.3As quantum wells: Effects of spatially dependent screening under electric and magnetic fields

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dc.authorscopusid57208502327
dc.authorscopusid19933617400
dc.authorscopusid6603294086
dc.authorscopusid6602193950
dc.authorscopusid7004930120
dc.contributor.authorAkbaş H.
dc.contributor.authorAktaş S.
dc.contributor.authorOkan S.E.
dc.contributor.authorUlaş M.
dc.contributor.authorTomak M.
dc.date.accessioned2024-06-12T10:24:45Z
dc.date.available2024-06-12T10:24:45Z
dc.date.issued1998
dc.description.abstractThe valence subband energies in the presence of an electric-field are calculated using the fourth-order Runge-Kutta method. The 1s-and 2p+-like acceptor states in the presence of a magnetic field are then calculated variationally. The effects of the spatially dependent screening function ?(r) on the calculation of the transition energies are specifically investigated. The use of a constant ?0 is shown to yield better agreement with experimental results.en_US
dc.identifier.doi10.1002/(SICI)1521-3951(199802)205:2<537
dc.identifier.endpage542en_US
dc.identifier.issn0370-1972
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-0040581733en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage537en_US
dc.identifier.urihttps://doi.org/10.1002/(SICI)1521-3951(199802)205:2<537
dc.identifier.urihttps://hdl.handle.net/20.500.14551/15973
dc.identifier.volume205en_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWiley-VCH Verlagen_US
dc.relation.ispartofPhysica Status Solidi (B) Basic Researchen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[Abstarct Not Available]en_US
dc.titleAcceptor 1s-2p± transitions in GaAs/Ga0.7Al0.3As quantum wells: Effects of spatially dependent screening under electric and magnetic fieldsen_US
dc.typeArticleen_US

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