Modelling the structure factors and pair distribution functions of amorphous germanium, silicon and carbon

Basit Öğe Kaydı
dc.authoridGonzalez, Luis E/0000-0001-6264-8329
dc.authorwosidPNM, GIR/O-7902-2014
dc.authorwosidGonzalez, Luis E/O-8836-2014
dc.contributor.authorDalgic, S
dc.contributor.authorGonzalez, LE
dc.contributor.authorBaer, S
dc.contributor.authorSilbert, M
dc.date.accessioned2024-06-12T11:15:43Z
dc.date.available2024-06-12T11:15:43Z
dc.date.issued2002
dc.departmentTrakya Üniversitesien_US
dc.description.abstractWe present the results of calculations of the static structure factor S(k) and the pair distribution function g(r) of the tetrahedral amorphous semiconductors germanium, silicon and carbon using the structural diffusion model (SDM). The results obtained with the SDM for S(k) and g(r) are of comparable quality with those obtained by the unconstrained Reverse Monte Carlo simulations and existing ab initio molecular dynamics simulations for these systems. We have found that g(r) exhibits a small peak, or shoulder, a weak remnant of the prominent third neighbour peak present in the crystalline phase of these systems. This feature has been experimentally found to be present in recently reported high energy X-ray experiments of amorphous silicon (Phys. Rev. B 60 (1999) 13520), as well as in the previous X-ray diffraction of as-evaporated amorphous germanium (Phys. Rev. B 50 (1994) 539). (C) 2002 Elsevier Science B.V. All rights reserved.en_US
dc.identifier.doi10.1016/S0921-4526(02)01415-1
dc.identifier.endpage304en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.issue1-4en_US
dc.identifier.scopus2-s2.0-0036849319en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage292en_US
dc.identifier.urihttps://doi.org/10.1016/S0921-4526(02)01415-1
dc.identifier.urihttps://hdl.handle.net/20.500.14551/24044
dc.identifier.volume324en_US
dc.identifier.wosWOS:000180104100038en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectStructural Modelen_US
dc.subjectTetrahedral Amorphous Semiconductorsen_US
dc.subjectReverse Monte-Carloen_US
dc.subjectDiamond-Like Carbonen_US
dc.subjectMolecular-Dynamicsen_US
dc.subjectDiffusion-Modelen_US
dc.subjectNeutron-Scatteringen_US
dc.subjectLiquiden_US
dc.subjectSien_US
dc.subjectGeen_US
dc.subjectDiffractionen_US
dc.subjectDensityen_US
dc.titleModelling the structure factors and pair distribution functions of amorphous germanium, silicon and carbonen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu