Simplified method to analyze drive strengths for gan power devices

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dc.authorscopusid57221587342
dc.authorscopusid55605246300
dc.authorscopusid25927218500
dc.authorscopusid36522616500
dc.contributor.authorBulut E.B.
dc.contributor.authorGulbahce M.O.
dc.contributor.authorKocabas D.A.
dc.contributor.authorDusmez S.
dc.date.accessioned2024-06-12T10:29:19Z
dc.date.available2024-06-12T10:29:19Z
dc.date.issued2021
dc.description2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 -- 3 May 2021 through 7 May 2021 -- -- 172114en_US
dc.description.abstractGaN power switches enable ultra-fast switching speeds, yet, the maximum gate drive strength is mainly limited by the voltage overshoot across drain-source junction. There is a complex relationship between the power loop inductance, gate resistance, load current, parasitic capacitances of the GaN FET and the resultant voltage ringing. In this paper, a simplified method to relate the gate drive strength with the voltage overshoot is presented. With this approach, it is possible to find a maximum achievable dV/dt for different GaN FETs as well as various board and package parasitics under different operating conditions, which helps designers to identify and compare I-V overlap losses of various GaN FETs without running SPICE models. © VDE VERLAG GMBH · Berlin · Offenbach.en_US
dc.description.sponsorship118C374en_US
dc.description.sponsorshipThis paper has been produced benefiting from the 2232 International Fellowship for Outstanding Researchers Program of TÜBİTAK (Project No: 118C374). However, the entire responsibility of the paper belongs to the owner of the paper. The financial support received from TÜBİTAK does not mean that the content of the publication is approved in a scientific sense by TÜBİTAK.en_US
dc.identifier.endpage152en_US
dc.identifier.isbn9.7838E+12
dc.identifier.issn2191-3358
dc.identifier.scopus2-s2.0-85117709669en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage145en_US
dc.identifier.urihttps://hdl.handle.net/20.500.14551/17688
dc.identifier.volume2021-Mayen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherMesago PCIM GmbHen_US
dc.relation.ispartofPCIM Europe Conference Proceedingsen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectEnergy Management; Gallium Nitride; Iii-V Semiconductors; Intelligent Robots; Power Electronics; Voltage Regulators; Drain Sources; Fast Switching; Gan Power Devices; Gate Drives; Power-Switches; Simplified Method; Source Junctions; Switching Speed; Ultra-Fast; Voltage Overshoot; Capacitanceen_US
dc.titleSimplified method to analyze drive strengths for gan power devicesen_US
dc.typeConference Objecten_US

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