Electronic and structural properties of large latticemismatched Si/BP superlattice

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dc.authorscopusid8729178800
dc.authorscopusid57198223084
dc.authorscopusid57670072100
dc.contributor.authorÖzkapi B.
dc.contributor.authorGüler S.
dc.contributor.authorDalgiç S.
dc.date.accessioned2024-06-12T10:29:10Z
dc.date.available2024-06-12T10:29:10Z
dc.date.issued2011
dc.description.abstractWe present results for electronic and structural properties of large lattice mismatched Si/BP superlattice by first principle calculations based on the density functional theory. A self-consistent pseudopotential calculation has been performed at Si/BP (001) strained interface. We also analyze the total energy of ground state, lattice constant and electrostatic potential line up of heterojunction between Si/BP zincblende compounds. Finally, we have investigated electronic band structure and the effect to electrostatic potential line up of structural details at interface of this system.en_US
dc.identifier.endpage1506en_US
dc.identifier.issn1454-4164
dc.identifier.issue11.Araen_US
dc.identifier.scopus2-s2.0-84855503644en_US
dc.identifier.scopusqualityQ4en_US
dc.identifier.startpage1502en_US
dc.identifier.urihttps://hdl.handle.net/20.500.14551/17616
dc.identifier.volume13en_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElectronic Band Structure; Electrostatic Potential; Heterostructure; Superlatticeen_US
dc.titleElectronic and structural properties of large latticemismatched Si/BP superlatticeen_US
dc.typeArticleen_US

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