Modeling of quantum point contacts in high magnetic fields and with current bias outside the linear response regime

dc.authoridWeichselbaum, Andreas/0000-0002-5832-3908
dc.authoridSiddiki, Afif/0000-0001-5045-0358
dc.authorwosidWeichselbaum, Andreas/I-8858-2012
dc.contributor.authorArslan, S.
dc.contributor.authorCicek, E.
dc.contributor.authorEksi, D.
dc.contributor.authorAktas, S.
dc.contributor.authorWeichselbaum, A.
dc.contributor.authorSiddiki, A.
dc.date.accessioned2024-06-12T11:18:59Z
dc.date.available2024-06-12T11:18:59Z
dc.date.issued2008
dc.departmentTrakya Üniversitesien_US
dc.description.abstractThe electron and current-density distributions in the close proximity of quantum point contacts (QPCs) are investigated. A three-dimensional Poisson equation is solved self-consistently to obtain the electron density and potential profile in the absence of an external magnetic field for gate and etching defined devices. We observe the surface charges and their apparent effect on the confinement potential, when considering the (deeply) etched QPCs. In the presence of an external magnetic field, we investigate the formation of the incompressible strips and their influence on the current distribution both in the linear response and out of linear response regime. A spatial asymmetry of the current carrying incompressible strips, induced by the large source drain voltages, is reported for such devices in the nonlinear regime.en_US
dc.description.sponsorshipSFB 631; NIM Area A; TUBITAK [105T110]; Trakya University [TUBAP-739-754-759]en_US
dc.description.sponsorshipThe authors would like to thank R. R. Gerhardts for his initiation, supervision, and contribution in developing the model. The enlightening discussions with V. Golovach and L. Litvin are also highly appreciated. The authors appreciate financial support from SFB 631, NIM Area A, TUBITAK under Grant No. 105T110, and Trakya University research fund under Project No. TUBAP-739-754-759.en_US
dc.identifier.doi10.1103/PhysRevB.78.125423
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-54049104337en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1103/PhysRevB.78.125423
dc.identifier.urihttps://hdl.handle.net/20.500.14551/25035
dc.identifier.volume78en_US
dc.identifier.wosWOS:000259691500094en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherAmer Physical Socen_US
dc.relation.ispartofPhysical Review Ben_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectHall Regimeen_US
dc.subjectEdge-Statesen_US
dc.subjectElectrostaticsen_US
dc.subjectLocalizationen_US
dc.subjectConductanceen_US
dc.subjectElectronsen_US
dc.subjectBreakdownen_US
dc.subjectPlateauen_US
dc.titleModeling of quantum point contacts in high magnetic fields and with current bias outside the linear response regimeen_US
dc.typeArticleen_US

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