Binding energy of 2p-bound state of a hydrogenic donor impurity in a GaAs/Ga1-xAlxAs spherical quantum dot under hydrostatic pressure

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dc.authoridBULUT, PINAR/0000-0003-2357-9943
dc.authoridBULUT, Pinar/0000-0001-5818-2263
dc.authorwosidBULUT, PINAR/AAS-8846-2020
dc.contributor.authorBulut, P.
dc.contributor.authorErdogan, I.
dc.contributor.authorAkbas, H.
dc.date.accessioned2024-06-12T11:16:48Z
dc.date.available2024-06-12T11:16:48Z
dc.date.issued2014
dc.departmentTrakya Üniversitesien_US
dc.description.abstractBy using a variational procedure within the effective mass approximation, we calculated the 2p state binding energy, E-2pha(x,P), and the binding energy turning point, R-2pEbT (X, P) of a hydrogenic donor impurity located at the centre of the GaAs GaAs/Ga1-xAlxAs spherical quantum dot under the influence of hydrostatic pressure. The results obtained show that the binding energy turning point, R-2pEbT(X, P) is an important factor in dealing with the 2p bound state of a hydrogenic donor impurity embedded at the centre of the quantum dot. (C) 2014 Elsevier By. All rights reserved,en_US
dc.identifier.doi10.1016/j.physe.2014.06.020
dc.identifier.endpage303en_US
dc.identifier.issn1386-9477
dc.identifier.issn1873-1759
dc.identifier.scopus2-s2.0-84904326165en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage299en_US
dc.identifier.urihttps://doi.org/10.1016/j.physe.2014.06.020
dc.identifier.urihttps://hdl.handle.net/20.500.14551/24463
dc.identifier.volume63en_US
dc.identifier.wosWOS:000340627000045en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica E-Low-Dimensional Systems & Nanostructuresen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectTurning Pointen_US
dc.subjectSpherical Doten_US
dc.subjectDonor Impurityen_US
dc.subjectBinding Energyen_US
dc.subjectMagnetic-Fielden_US
dc.subjectExcited-Statesen_US
dc.subjectElectric-Fielden_US
dc.subjectTransition Energiesen_US
dc.subjectGaas-Ga1-Xalxasen_US
dc.subjectWellsen_US
dc.subjectWiresen_US
dc.titleBinding energy of 2p-bound state of a hydrogenic donor impurity in a GaAs/Ga1-xAlxAs spherical quantum dot under hydrostatic pressureen_US
dc.typeArticleen_US

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