Density functional calculation for BP/GaN heterostructures
Küçük Resim Yok
Tarih
2018
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Trans Tech Publications Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Recently, it has become indispensable to use semiconducting nanostructures in the production and development of electronic devices. In this study, the bulk and nanowire heterostructures of the BP / GaN system have been investigated for the structures pure and Te atom doped. In calculations, the plane wave self consistent field program based on density functional theory was used. The average potentials of the aforementioned systems have been calculated and the interface effect has investigated. © 2018 Trans Tech Publications, Switzerland.
Açıklama
6th International Conference on Nanostructures, Nanomaterials and Nanoengineering, ICNNN 2017 and 2nd International Conference on Materials Technology and Applications, ICMTA 2017 -- 26 October 2017 through 29 October 2017 -- -- 212509
Anahtar Kelimeler
Bp/Gan Nanowires; Density Functional Theory; Doping, Doping (Additives); Nanowires; Average Potential; Electronic Device; Interface Effect; Nanowire Heterostructures; Plane Wave; Self-Consistent Field; Semiconducting Nanostructures; Density Functional Theory
Kaynak
Materials Science Forum
WoS Q Değeri
Scopus Q Değeri
Q4
Cilt
916 MSF
